Material proposal for 2D indium oxide

• Published in: Applied surface science 2021-05, Vol.548, p.149275, Article 149275
• Main Authors: Kakanakova-Georgieva, Anelia, Giannazzo, Filippo, Nicotra, Giuseppe, Cora, Ildikó, Gueorguiev, Gueorgui K., Persson, Per O.Å., Pécz, Béla
• Format: Article
• Language: English
• Subjects: 2D oxides; Conductive atomic force microscopy; Metal organic chemical vapor deposition; Scanning transmission electron microscopy
• ISSN: 0169-4332; 1873-5584; 1873-5584
• DOI: 10.1016/j.apsusc.2021.149275

•Formation of 2D InO by confinement at graphene/SiC interface in MOCVD processes.•2D InO manifests itself in a different hexagonal structure than 2D InN.•Distinct structure underpinned by In atoms in “atop” positions imaged by STEM.•Wide bandgap value of 4.1 eV estimated by conductive atomic force microscopy. Realization of semiconductor materials at the two-dimensional (2D) limit can elicit exceptional and diversified performance exercising transformative influence on modern technology. We report experimental evidence for the formation of conceptually new 2D indium oxide (InO) and its material characteristics. The formation of 2D InO was harvested through targeted intercalation of indium (In) atoms and deposition kinetics at graphene/SiC interface using a robust metal organic chemical vapor deposition (MOCVD) process. A distinct structural configuration of two sub-layers of In atoms in “atop” positions was imaged by scanning transmission electron microscopy (STEM). The bonding of oxygen atoms to indium atoms was indicated using electron energy loss spectroscopy (EELS). A wide bandgap energy measuring a value of 4.1 eV was estimated by conductive atomic force microscopy measurements (C-AFM) for the 2D InO.