Thermoelectric transport properties of highly oriented FeSb2 thin films

Highly textured FeSb2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S∼160 μV K−1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobili...

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Bibliographic Details
Published in:Journal of applied physics 2009-08, Vol.106 (3)
Main Authors: Sun, Y., Johnsen, S., Eklund, P., Sillassen, M., Bøttiger, J., Oeschler, N., Sun, P., Steglich, F., Iversen, B. B.
Format: Article
Language:English
Subjects:
carrier density
electrical resistivity
Hall mobility
iron compounds
NATURAL SCIENCES
NATURVETENSKAP
Seebeck effect
semiconductor thin films
sputter deposition
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Summary:Highly textured FeSb2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S∼160 μV K−1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb2 films. By comparing with the transport properties of FeSb2 single crystals and an extrinsically doped FeSb1.98Te0.02 single crystal, the thermoelectric properties of the FeSb2 films are demonstrated to be dominated by the intrinsic properties of FeSb2 at a high charge carrier concentration.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3155800