A combinatorial approach for field-effect gas sensor research and development

A continuous two-dimensional variation of the properties of the gas sensitive layer of a metal-insulator-semiconductor structure has been analyzed with the scanning light pulse technique. This technique allows a lateral resolution of the local gas response and is, therefore, well suited for analyzin...

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Bibliographic Details
Published in:IEEE sensors journal 2005-10, Vol.5 (5), p.995-1003
Main Authors: Klingvall, R., Lundstrom, I., Lofdahl, M., Eriksson, M.
Format: Article
Language:English
Subjects:
Ammonia
Atomic layer deposition
Biological materials
Chemical lasers
chemical sensor
Chemical sensors
field-effect gas sensor
Gas detectors
gas sensing
Hydrogen
Insulation
metal-insulator-semiconductor (MIS)
NATURAL SCIENCES
NATURVETENSKAP
Physics
Research and development
scanning light pulse technique (SLPT)
scanning light pulse technoque (SLPT)
Sensor arrays
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Description
Summary:A continuous two-dimensional variation of the properties of the gas sensitive layer of a metal-insulator-semiconductor structure has been analyzed with the scanning light pulse technique. This technique allows a lateral resolution of the local gas response and is, therefore, well suited for analyzing a device where each point of the gas sensitive layer has unique properties. The results show that this method has the potential to optimize the thickness combination of the metal films for a double-layer component to improve important sensor properties such as sensitivity, selectivity, and stability using a drastically reduced number of components.
ISSN:1530-437X
1558-1748
1558-1748
DOI:10.1109/JSEN.2005.845193