Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved micro-photoluminescence, secondary ion mass spectroscopy, Raman scattering and positron annihilation...

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Bibliographic Details
Main Authors: Paskova, T, Arnaudov, B, Paskov, P P, Goldys, E M, Hautakangas, S, Saarinen, K, Sodervall, U, Monemar, B
Format: Conference Proceeding
Language:English
Subjects:
NATURAL SCIENCES
NATURVETENSKAP
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Summary:A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved micro-photoluminescence, secondary ion mass spectroscopy, Raman scattering and positron annihilation spectroscopy results, as well as on a kinetic analysis of the emission intensities, we propose an acceptor like complex, creating a state as a semiclassical potential well near the valence band bottom due to the tensile strain caused by the empty clusters to be responsible for the dominating behaviour of the DAP emission.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.1994092