Optically detected magnetic resonance studies of point defects in Ga(Al)NAs

An optically detected magnetic resonance (ODMR) study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates is presented. A number of grown-in defects were observed which act as nonradiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian lea...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2006-03, Vol.73 (12), p.125204, Article 125204
Main Authors: Vorona, I. P., Mchedlidze, T., Dagnelund, D., Buyanova, I. A., Chen, W. M., Köhler, K.
Format: Article
Language:English
Subjects:
Condensed matter physics
Fysik
Halvledarfysik
Kondenserade materiens fysik
NATURAL SCIENCES
NATURVETENSKAP
Physics
Semiconductor physics
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Summary:An optically detected magnetic resonance (ODMR) study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates is presented. A number of grown-in defects were observed which act as nonradiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian leads to the identification of two Gai defects. A comparison with similar defects in other phosphide-based diluted nitride III-V compounds, such as GaAlNP and GaInNP, allows us to obtain additional information about the nearest surrounding of the defects. A discussion of possible models for other defects observed in the experiments is also presented. © 2006 The American Physical Society.
ISSN:1098-0121
1550-235X
1550-235X
DOI:10.1103/PhysRevB.73.125204