A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum

3C-SiC epitaxial layers with a thickness of up to 100 {mu}m were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm{sup 2} and uncompensated donor concentration N{sub d} - N{sub a} {approx} (10{sup 17}-10{sup 18})...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2007-03, Vol.41 (3), p.263-265
Main Authors: Lebedev, A. A., Zelenin, V. V., Abramov, P. L., Bogdanova, E. V., Lebedev, S. P., Nel’son, D. K., Razbirin, B. S., Shcheglov, M. P., Tregubova, A. S., Suvajarvi, M., Yakimova, R.
Format: Article
Language:English
Subjects:
ELECTRONIC EQUIPMENT
EPITAXY
EV RANGE 01-10
LAYERS
MATERIALS SCIENCE
NATURAL SCIENCES
NATURVETENSKAP
PHOTOLUMINESCENCE
SILICON CARBIDES
SPECTRA
SUBLIMATION
SUBSTRATES
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Summary:3C-SiC epitaxial layers with a thickness of up to 100 {mu}m were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm{sup 2} and uncompensated donor concentration N{sub d} - N{sub a} {approx} (10{sup 17}-10{sup 18}) cm{sup -3} were produced at maximum growth rates of up to 200 {mu}m/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv {approx} 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices.
ISSN:1063-7826
1090-6479
1090-6479
DOI:10.1134/S1063782607030037