Properties of Al-SrTiO3-ITO capacitors for microelectronic device applications

Growth of SrTiO3 (STO) thin films on indium tin oxide (ITO) substrates took place by RF magnetron sputtering under various deposition conditions. Subsequent AI metallization created metal-insulator-metal (MIM) capacitors. The properties of such capacitors were investigated by means of structural and...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-07, Vol.51 (7), p.1202
Main Authors: Konofaos, N, Evangelou, E.K, Wang, Z, Helmersson, U
Format: Article
Language:English
Subjects:
TECHNOLOGY
TEKNIKVETENSKAP
Online Access:Get full text
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Summary:Growth of SrTiO3 (STO) thin films on indium tin oxide (ITO) substrates took place by RF magnetron sputtering under various deposition conditions. Subsequent AI metallization created metal-insulator-metal (MIM) capacitors. The properties of such capacitors were investigated by means of structural and electrical measurements, revealing the films transparency, the dielectric constant, the switching time characteristics, and the trapped charges density. Dielectric constant values as high as 120 were obtained for low frequencies of around 2 kHz, the switching time was found to be 3.2 µs and the trapped charges were found equal to 2.9 nCcm-2. The results showed that the films were suitable for use in electronic devices where high capacitance is required and for potential applications in optical devices. © 2004 IEEE.
ISSN:0018-9383
1557-9646
1557-9646
DOI:10.1109/TED.2004.829900