Self-diffusion of 12 C and 13 C in intrinsic 4H-SiC

The study of self-diffusion of carbon (12C and 13C) in low-doped (intrinsic) 4H-SiC using secondary ion mass spectroscopy (SIMS) was presented. A two layer 13C enriched structure with 13C/12C ratios of 0.01 and 0.1, respectively, was prepared by using vapor phase epitaxy. The subsequent anneals were...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2004, Vol.95 (12), p.8469
Main Authors: Linnarsson, M.K., Janson, M.S., Zhang, J., Janzén, Erik, Svensson, B.G.
Format: Article
Language:English
Subjects:
TECHNOLOGY
TEKNIKVETENSKAP
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The study of self-diffusion of carbon (12C and 13C) in low-doped (intrinsic) 4H-SiC using secondary ion mass spectroscopy (SIMS) was presented. A two layer 13C enriched structure with 13C/12C ratios of 0.01 and 0.1, respectively, was prepared by using vapor phase epitaxy. The subsequent anneals were carried out in Ar atmosphere in a rf heated furnace between 2100 and 2350°C for 15 min-40 h. A small variation in the enriched 13C concentration and in the layer thickness over the wafer was also presented.
ISSN:1089-7550
0021-8979
DOI:10.1063/1.1751229