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Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions
The partial dislocations that border triangle or parallelogram-shaped stacking faults formed during the degradation of p-n diodes fabricated on 4H–SiC wafers were determined by transmission X-ray topography to be dislocation loops of Burgers vector 1/3〈10 1 ̄ 0〉, the Shockley partial type, consisten...
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| Published in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2003-04, Vol.98 (3), p.220-224 |
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| Main Authors: | , , , , , |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c469t-659b330e01311363852accb53cbebcb6a70adcdbad2045e199bda8ad1a674fb63 |
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| cites | cdi_FETCH-LOGICAL-c469t-659b330e01311363852accb53cbebcb6a70adcdbad2045e199bda8ad1a674fb63 |
| container_end_page | 224 |
| container_issue | 3 |
| container_start_page | 220 |
| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
| container_volume | 98 |
| creator | Vetter, W.M. Liu, J.Q. Dudley, M. Skowronski, M. Lendenmann, H. Hallin, C. |
| description | The partial dislocations that border triangle or parallelogram-shaped stacking faults formed during the degradation of p-n diodes fabricated on 4H–SiC wafers were determined by transmission X-ray topography to be dislocation loops of Burgers vector 1/3〈10
1
̄
0〉, the Shockley partial type, consistent with previously reported TEM results. Some were separated from axial screw dislocations also present in the sample, indicating that the axial dislocations were not involved in the loops’ nucleation; while others were seen to have interacted during their growth with the axial screw dislocations, distorting their shapes from those of ideal parallelograms. |
| doi_str_mv | 10.1016/S0921-5107(03)00040-0 |
| format | article |
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1
̄
0〉, the Shockley partial type, consistent with previously reported TEM results. Some were separated from axial screw dislocations also present in the sample, indicating that the axial dislocations were not involved in the loops’ nucleation; while others were seen to have interacted during their growth with the axial screw dislocations, distorting their shapes from those of ideal parallelograms.</description><identifier>ISSN: 0921-5107</identifier><identifier>ISSN: 1873-4944</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/S0921-5107(03)00040-0</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Device degradation ; Diodes ; Dislocation loops ; Silicon carbide crystals ; TECHNOLOGY ; TEKNIKVETENSKAP ; X-ray topography</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2003-04, Vol.98 (3), p.220-224</ispartof><rights>2003 Elsevier Science B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c469t-659b330e01311363852accb53cbebcb6a70adcdbad2045e199bda8ad1a674fb63</citedby><cites>FETCH-LOGICAL-c469t-659b330e01311363852accb53cbebcb6a70adcdbad2045e199bda8ad1a674fb63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-46663$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Vetter, W.M.</creatorcontrib><creatorcontrib>Liu, J.Q.</creatorcontrib><creatorcontrib>Dudley, M.</creatorcontrib><creatorcontrib>Skowronski, M.</creatorcontrib><creatorcontrib>Lendenmann, H.</creatorcontrib><creatorcontrib>Hallin, C.</creatorcontrib><title>Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>The partial dislocations that border triangle or parallelogram-shaped stacking faults formed during the degradation of p-n diodes fabricated on 4H–SiC wafers were determined by transmission X-ray topography to be dislocation loops of Burgers vector 1/3〈10
1
̄
0〉, the Shockley partial type, consistent with previously reported TEM results. Some were separated from axial screw dislocations also present in the sample, indicating that the axial dislocations were not involved in the loops’ nucleation; while others were seen to have interacted during their growth with the axial screw dislocations, distorting their shapes from those of ideal parallelograms.</description><subject>Device degradation</subject><subject>Diodes</subject><subject>Dislocation loops</subject><subject>Silicon carbide crystals</subject><subject>TECHNOLOGY</subject><subject>TEKNIKVETENSKAP</subject><subject>X-ray topography</subject><issn>0921-5107</issn><issn>1873-4944</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqF0M1O3DAUBWALFYkp9BEqZVVRiZTr2HGSFRoNUCqNxAJadWf552bqUSZO7QTEjnfgDXmSJqSaLau7-c6R7iHkM4VvFKg4v4Mqo2lOoTgF9hUAOKRwQBa0LFjKK84_kMWeHJGPMW5HRLMsW5Dfly423qje-TZpvO9iUvuwQ5vYIbh2k_R_MLG4CcrOxtcTeFTBptqpOEJ-8_r8cudWSZe2yXZozeTiCTmsVRPx0_97TH5eX92vbtL17fcfq-U6NVxUfSrySjMGCJRRygQr80wZo3NmNGqjhSpAWWO1shnwHGlVaatKZakSBa-1YMfkbO6Nj9gNWnbB7VR4kl45eel-LaUPG9m4QXIhBBv5l5l3wf8dMPZy56LBplEt-iHKrChZSSmMMJ-hCT7GgPW-mYKcZpdvs8tpUwlMvs0up9zFnMPx6QeHQUbjsDVoXUDTS-vdOw3_ABHAi68</recordid><startdate>20030415</startdate><enddate>20030415</enddate><creator>Vetter, W.M.</creator><creator>Liu, J.Q.</creator><creator>Dudley, M.</creator><creator>Skowronski, M.</creator><creator>Lendenmann, H.</creator><creator>Hallin, C.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>DG8</scope></search><sort><creationdate>20030415</creationdate><title>Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions</title><author>Vetter, W.M. ; Liu, J.Q. ; Dudley, M. ; Skowronski, M. ; Lendenmann, H. ; Hallin, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c469t-659b330e01311363852accb53cbebcb6a70adcdbad2045e199bda8ad1a674fb63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Device degradation</topic><topic>Diodes</topic><topic>Dislocation loops</topic><topic>Silicon carbide crystals</topic><topic>TECHNOLOGY</topic><topic>TEKNIKVETENSKAP</topic><topic>X-ray topography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vetter, W.M.</creatorcontrib><creatorcontrib>Liu, J.Q.</creatorcontrib><creatorcontrib>Dudley, M.</creatorcontrib><creatorcontrib>Skowronski, M.</creatorcontrib><creatorcontrib>Lendenmann, H.</creatorcontrib><creatorcontrib>Hallin, C.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Linköpings universitet</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vetter, W.M.</au><au>Liu, J.Q.</au><au>Dudley, M.</au><au>Skowronski, M.</au><au>Lendenmann, H.</au><au>Hallin, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2003-04-15</date><risdate>2003</risdate><volume>98</volume><issue>3</issue><spage>220</spage><epage>224</epage><pages>220-224</pages><issn>0921-5107</issn><issn>1873-4944</issn><eissn>1873-4944</eissn><abstract>The partial dislocations that border triangle or parallelogram-shaped stacking faults formed during the degradation of p-n diodes fabricated on 4H–SiC wafers were determined by transmission X-ray topography to be dislocation loops of Burgers vector 1/3〈10
1
̄
0〉, the Shockley partial type, consistent with previously reported TEM results. Some were separated from axial screw dislocations also present in the sample, indicating that the axial dislocations were not involved in the loops’ nucleation; while others were seen to have interacted during their growth with the axial screw dislocations, distorting their shapes from those of ideal parallelograms.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0921-5107(03)00040-0</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-5107 |
| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2003-04, Vol.98 (3), p.220-224 |
| issn | 0921-5107 1873-4944 1873-4944 |
| language | eng |
| recordid | cdi_swepub_primary_oai_DiVA_org_liu_46663 |
| source | ScienceDirect Journals |
| subjects | Device degradation Diodes Dislocation loops Silicon carbide crystals TECHNOLOGY TEKNIKVETENSKAP X-ray topography |
| title | Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions |
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