Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

Photoexcitation-electron-paramagnetic-resonance (photo-EPR) studies were performed on p-type 4H-SiC irradiated with 2.5 MeV electrons. At W-band frequencies (∼95 GHz) different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the associated defects...

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Bibliographic Details
Published in:Applied physics letters 2002-11, Vol.81 (21), p.3945-3947
Main Authors: Son, N. T., Magnusson, B., Janzén, E.
Format: Article
Language:English
Subjects:
TECHNOLOGY
TEKNIKVETENSKAP
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Summary:Photoexcitation-electron-paramagnetic-resonance (photo-EPR) studies were performed on p-type 4H-SiC irradiated with 2.5 MeV electrons. At W-band frequencies (∼95 GHz) different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the associated defects. The photo-EPR results obtained for the positively charged carbon vacancy (VC+) can be explained by a deep donor model with the (+/0) level located at (1.47±0.06) eV above the valence band.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.1522822