Optical properties of donor-triad cluster in GaAs and GaN

The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-partic...

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Published in:Applied physics letters 2002-10, Vol.81 (17), p.3158-3160
Main Authors: Souza de Almeida, J., da Silva, A. J., Norman, P., Persson, C., Ahuja, R., Ferreira da Silva, A.
Format: Article
Language:English
Subjects:
Absorption measurements
Correlation effect
Electronic transition
Far-infrared absorption
GaAs
Gallium arsenide
Gallium nitride
Model calculations
Optical properties
Peak energy
Self-consistent field
Semiconducting gallium
TECHNOLOGY
TEKNIKVETENSKAP
Transition energy
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da Silva, A. J.
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Ahuja, R.
Ferreira da Silva, A.
description The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions.
doi_str_mv 10.1063/1.1515121
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source American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Absorption measurements
Correlation effect
Electronic transition
Far-infrared absorption
GaAs
Gallium arsenide
Gallium nitride
Model calculations
Optical properties
Peak energy
Self-consistent field
Semiconducting gallium
TECHNOLOGY
TEKNIKVETENSKAP
Transition energy
title Optical properties of donor-triad cluster in GaAs and GaN
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