Organosilane-functionalized wide band gap semiconductor surfaces

Surface functionalization of wide band gap semiconductors, SiC, ZnO, and GaN, with organosilane is reported. Formation of self-assembled monolayers of mercaptopropyltrimethoxysilane is confirmed by x-ray photoelectron spectroscopy and atomic force microscopy. The molecules are adsorbed on the surfac...

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Bibliographic Details
Published in:Applied physics letters 2007-05, Vol.90 (22), p.223904-223904-3
Main Authors: Petoral, R. M., Yazdi, G. R., Lloyd Spetz, A., Yakimova, R., Uvdal, K.
Format: Article
Language:English
Subjects:
TECHNOLOGY
TEKNIKVETENSKAP
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Summary:Surface functionalization of wide band gap semiconductors, SiC, ZnO, and GaN, with organosilane is reported. Formation of self-assembled monolayers of mercaptopropyltrimethoxysilane is confirmed by x-ray photoelectron spectroscopy and atomic force microscopy. The molecules are adsorbed on the surfaces through the silane groups with the free thiol groups molecularly oriented away from the surface. Moreover, chemisorption via the thiolate is observed for the ZnO surface. Immobilization of a model biomolecule to the functionalized surface is demonstrated. An amino acid derivative, i.e., phosphotyrosine derived thiol, is linked on the functionalized ZnO and GaN surfaces via formation of disulfide bridges.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.2745641