Asymmetric split-vacancy defects in SiC polytypes: a combined theoretical and electron spin resonance study

Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these defects that preferentially form at only one site in hexagonal polytypes, and they may not be detectable at all in cu...

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Bibliographic Details
Published in:Physical review letters 2011-11, Vol.107 (19), p.195501-195501, Article 195501
Main Authors: Ivády, Viktor, Gällström, Andreas, Son, Nguyen Tien, Janzén, Erik, Gali, Adam
Format: Article
Language:English
Subjects:
TECHNOLOGY
TEKNIKVETENSKAP
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Summary:Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these defects that preferentially form at only one site in hexagonal polytypes, and they may not be detectable at all in cubic polytype. Electron spin resonance study demonstrates the existence of ASV complex in niobium doped 4H polytype of SiC.
ISSN:0031-9007
1079-7114
1079-7114
DOI:10.1103/physrevlett.107.195501