High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

• Published in: Journal of crystal growth 2012, Vol.338 (1), p.52-56
• Main Authors: Kakanakova-Georgieva, A., Nilsson, D., Janzén, E.
• Format: Article
• Language: English
• Subjects: A3. Metalorganic chemical vapor deposition; Aluminum nitride; B1. Nitrides; B2. Semiconducting III–V materials; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Crystal growth; Crystal structure; Exact sciences and technology; Materials science; Metalorganic chemical vapor deposition; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Multilayers; Physics; Precursors; Reactors; Silicon carbide; TECHNOLOGY; TEKNIKVETENSKAP; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
• ISSN: 0022-0248; 1873-5002; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.10.052

We report on a growth of AlN at reduced temperatures of 1100 °C and 1200 °C in a horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500–1600 °C and using a joint delivery of precursors. We present a simple route—as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply—for the AlN growth process on SiC substrates at the reduced temperature of 1200 °C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ∼700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization. ► A simple route for AlN growth process on SiC at the reduced temperature of 1200 °C. ► The established growth conditions involve joint delivery of TMAl and NH 3 precursors. ► Accomplishment of crystalline, thin, ∼700 nm, single AlN layers of device quality.