Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τS in monolayer graphene, while the spin diffusion coefficient D S is str...

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Bibliographic Details
Published in:Nano letters 2012-03, Vol.12 (3), p.1498-1502
Main Authors: Maassen, Thomas, van den Berg, J. Jasper, IJbema, Natasja, Fromm, Felix, Seyller, Thomas, Yakimova, Rositza, van Wees, Bart J
Format: Article
Language:English
Subjects:
Carbon Compounds, Inorganic - chemistry
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Crystallization - methods
Devices
Diffusion coefficient
Diffusion in nanoscale solids
Diffusion in solids
Epitaxial growth
Epitaxy
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Graphene
Graphite - chemistry
Hanle precession
Macromolecular Substances - chemistry
Materials science
Materials Testing
Molecular Conformation
Monolayers
Nanostructure
Nanostructures - chemistry
Nanostructures - ultrastructure
Particle Size
Physics
Relaxation time
Silicon Compounds - chemistry
Specific materials
Spin transport
Surface Properties
TECHNOLOGY
TEKNIKVETENSKAP
Transport
Transport properties of condensed matter (nonelectronic)
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Description
Summary:We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τS in monolayer graphene, while the spin diffusion coefficient D S is strongly reduced compared to typical results on exfoliated graphene. The increase of τS is probably related to the changed substrate, while the cause for the small value of D S remains an open question.
ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/nl2042497