Changes in structural and electronic properties of graphene grown on 6H-SiC(0001) induced by Na deposition

• Published in: Journal of applied physics 2012-04, Vol.111 (8), p.083711-083711-6
• Main Authors: Watcharinyanon, S., Johansson, L. I., Xia, C., Virojanadara, C.
• Format: Article
• Language: English
• Subjects: TECHNOLOGY; TEKNIKVETENSKAP
• ISSN: 0021-8979; 1089-7550; 1089-7550
• DOI: 10.1063/1.4704396

The effects of Na deposited on monolayer graphene on SiC(001) were investigated by synchrotron-based photoelectron spectroscopy and angle resolved photoelectron spectroscopy. The experimental results show that Na prefers to adsorb on the graphene layer after deposition at room temperature. Nonetheless, part of the Na atoms are able to intercalate in between the graphene and the buffer layer and some go even further into the substrate interface as indicated by the shift of the bulk SiC component in the C 1s and Si 2p core level spectra. The ARPES spectrum exhibits a lowering of the Dirac point indicating increased n -type doping of the monolayer graphene induced by the deposited Na atoms. Upon subsequently heating the sample, we found that a slightly elevated temperature is essential in order to promote Na intercalation. A fully Na intercalation at the graphene-SiC interface is obtained after heating at a temperature of about 75°C. The intercalated Na decouples the buffer layer and transforms it into a second graphene layer so two π-bands are observed in the ARPES spectra. Interestingly, the two bands show different locations of the Dirac point but both exhibit linear dispersion in the vicinity of the K ¯ point and not the hyperbolic dispersion observed for AB stacked bi-layer graphene. When heating the sample to about 125°C or higher, Na is found to leave the interface and the second graphene layer is transformed back to the carbon buffer layer.