Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe2 on GaAs

• Published in: Crystal growth & design 2021-10, Vol.21 (10), p.5773-5779
• Main Authors: Seredyński, Bartłomiej, Ogorzałek, Zuzanna, Zajkowska, Wiktoria, Bożek, Rafał, Tokarczyk, Mateusz, Suffczyński, Jan, Kret, Sławomir, Sadowski, Janusz, Gryglas-Borysiewicz, Marta, Pacuski, Wojciech
• Format: Article
• Language: English
• Subjects: Condensed Matter Physics; Kondenserade materians fysik
• ISSN: 1528-7483; 1528-7505; 1528-7505
• DOI: 10.1021/acs.cgd.1c00673

The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here, we present the first molecular beam epitaxy growth of a NiTe2 2D transition-metal dichalcogenide. Importantly, the growth is realized on a nearly lattice-matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunneling microscopy. Surface coverage and atomic-scale order are evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that the NiTe2 layers are metallic, with a Hall concentration of 1020 to 1023 cm–3, depending on the growth conditions.