Oxidation studies of silicon oxynitride ceramics

Silicon oxynitride ceramics free from sintering aids were oxidised in oxygen-argon and oxygen-nitrogen gas mixtures with varying oxygen and nitrogen partial pressures in the range of 1000 to 1300 C. Oxidation kinetics of Si2N2O followed a parabolic rate law with activation energies ranging from 43 t...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1998-04, Vol.145 (4), p.1355-1360
Main Authors: MANESSIS, D, HONGHUA DU, LARKER, R
Format: Article
Language:English
Subjects:
Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
Exact sciences and technology
Material Mechanics
Materialmekanik
Structural ceramics
Technical ceramics
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Summary:Silicon oxynitride ceramics free from sintering aids were oxidised in oxygen-argon and oxygen-nitrogen gas mixtures with varying oxygen and nitrogen partial pressures in the range of 1000 to 1300 C. Oxidation kinetics of Si2N2O followed a parabolic rate law with activation energies ranging from 43 to 52 kcal/mol. The parabolic rate constants for Si2N2O exhibited a linear dependence on the oxygen partial pressure but no dependence on the nitrogen partial pressure. These findings, in conjunction with knowledge of the oxide and interface characteristics of oxidised samples, suggested that molecular oxygen diffusion through SiO2 plays a predominant role in the rate-limiting process for the oxidation of Si2N2O. 28 refs.
ISSN:0013-4651
1945-7111
1945-7111
DOI:10.1149/1.1838465