Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon

We have observed the donor ( E c−0.22 eV) and acceptor ( E c−0.16 eV) levels related to hydrogen–carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen–carbon complex irreversibly reconfigures at temperatures above 225 K to a config...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2001-12, Vol.308, p.139-142
Main Authors: Andersen, O, Dobaczewski, L, Peaker, A.R, Bonde Nielsen, K, Hourahine, B, Jones, R, Briddon, P.R, Öberg, S
Format: Article
Language:English
Subjects:
Hydrogen–carbon pair
Laplace DLTS
Scientific Computing
Silicon
Teknisk-vetenskapliga beräkningar
Uniaxial stress
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Summary:We have observed the donor ( E c−0.22 eV) and acceptor ( E c−0.16 eV) levels related to hydrogen–carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen–carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen–carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results.
ISSN:0921-4526
1873-2135
1873-2135
DOI:10.1016/S0921-4526(01)00672-X