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Density functional theory calculations of defect energies using supercells
Reliable calculations of defect properties may be obtained with density functional theory (DFT) using the supercell approximation. We systematically review the known sources of error and suggest how to perform calculations of defect properties in order to minimize errors. We argue that any analytica...
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Published in: | Modelling and simulation in materials science and engineering 2009-12, Vol.17 (8), p.084003-084003 (21) |
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container_end_page | 084003 (21) |
container_issue | 8 |
container_start_page | 084003 |
container_title | Modelling and simulation in materials science and engineering |
container_volume | 17 |
creator | Castleton, C W M Höglund, A Mirbt, S |
description | Reliable calculations of defect properties may be obtained with density functional theory (DFT) using the supercell approximation. We systematically review the known sources of error and suggest how to perform calculations of defect properties in order to minimize errors. We argue that any analytical error-correction scheme relying on electrostatic considerations alone is not appropriate to derive reliable defect formation energies, certainly not for relaxed geometries. Instead we propose finite size scaling of the calculated defect formation energies, and compare the application of this with both fully converged and 'Gamma' (Gamma) point only k-point integration. We provide a recipe for practical DFT calculations which will help to obtain reliable defect formation energies and demonstrate it using examples from III-V semiconductors. |
doi_str_mv | 10.1088/0965-0393/17/8/084003 |
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fullrecord | <record><control><sourceid>proquest_swepu</sourceid><recordid>TN_cdi_swepub_primary_oai_DiVA_org_uu_127394</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>743172115</sourcerecordid><originalsourceid>FETCH-LOGICAL-c513t-62d01d5cee1c2bb7564b3796dc3c52405d55624fe567cc63431a47a13702d8263</originalsourceid><addsrcrecordid>eNqNkEtPwzAQhC0EEqXwE5By49JQP2I7PVYtT1XiAoib5TibYpTGwY6F-u9JCOICB06rWX0zuxqEzgm-JDjP53gheIrZgs2JnPcyzzBmB2hCmCCp4OTlEE1-mGN0EsIbxpjnVE7Q_RqaYLt9UsXGdNY1uk66V3B-nxhdm1jrYRkSVyUlVGC6BBrwWwshicE22yTEFryBug6n6KjSdYCz7zlFT9dXj6vbdPNwc7dablLDCetSQUtMSm4AiKFFIbnICiYXojTMcJphXnIuaFYBF9IYwTJGdCY1YRLTMqeCTdFszA0f0MZCtd7utN8rp61a2-elcn6rYlSESrbIevxixFvv3iOETu1sGB7WDbgYlOwPSEoI70k-ksa7EDxUP9EEq6FpNbSohhYVkaqXX033Pjz6rGv_bZn9tvyJqras2CcHz40f</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>743172115</pqid></control><display><type>article</type><title>Density functional theory calculations of defect energies using supercells</title><source>Institute of Physics</source><creator>Castleton, C W M ; Höglund, A ; Mirbt, S</creator><creatorcontrib>Castleton, C W M ; Höglund, A ; Mirbt, S</creatorcontrib><description>Reliable calculations of defect properties may be obtained with density functional theory (DFT) using the supercell approximation. We systematically review the known sources of error and suggest how to perform calculations of defect properties in order to minimize errors. We argue that any analytical error-correction scheme relying on electrostatic considerations alone is not appropriate to derive reliable defect formation energies, certainly not for relaxed geometries. Instead we propose finite size scaling of the calculated defect formation energies, and compare the application of this with both fully converged and 'Gamma' (Gamma) point only k-point integration. We provide a recipe for practical DFT calculations which will help to obtain reliable defect formation energies and demonstrate it using examples from III-V semiconductors.</description><identifier>ISSN: 0965-0393</identifier><identifier>ISSN: 1361-651X</identifier><identifier>EISSN: 1361-651X</identifier><identifier>DOI: 10.1088/0965-0393/17/8/084003</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>Fysik ; NATURAL SCIENCES ; NATURVETENSKAP ; Physics</subject><ispartof>Modelling and simulation in materials science and engineering, 2009-12, Vol.17 (8), p.084003-084003 (21)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c513t-62d01d5cee1c2bb7564b3796dc3c52405d55624fe567cc63431a47a13702d8263</citedby><cites>FETCH-LOGICAL-c513t-62d01d5cee1c2bb7564b3796dc3c52405d55624fe567cc63431a47a13702d8263</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-127394$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Castleton, C W M</creatorcontrib><creatorcontrib>Höglund, A</creatorcontrib><creatorcontrib>Mirbt, S</creatorcontrib><title>Density functional theory calculations of defect energies using supercells</title><title>Modelling and simulation in materials science and engineering</title><description>Reliable calculations of defect properties may be obtained with density functional theory (DFT) using the supercell approximation. We systematically review the known sources of error and suggest how to perform calculations of defect properties in order to minimize errors. We argue that any analytical error-correction scheme relying on electrostatic considerations alone is not appropriate to derive reliable defect formation energies, certainly not for relaxed geometries. Instead we propose finite size scaling of the calculated defect formation energies, and compare the application of this with both fully converged and 'Gamma' (Gamma) point only k-point integration. We provide a recipe for practical DFT calculations which will help to obtain reliable defect formation energies and demonstrate it using examples from III-V semiconductors.</description><subject>Fysik</subject><subject>NATURAL SCIENCES</subject><subject>NATURVETENSKAP</subject><subject>Physics</subject><issn>0965-0393</issn><issn>1361-651X</issn><issn>1361-651X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNkEtPwzAQhC0EEqXwE5By49JQP2I7PVYtT1XiAoib5TibYpTGwY6F-u9JCOICB06rWX0zuxqEzgm-JDjP53gheIrZgs2JnPcyzzBmB2hCmCCp4OTlEE1-mGN0EsIbxpjnVE7Q_RqaYLt9UsXGdNY1uk66V3B-nxhdm1jrYRkSVyUlVGC6BBrwWwshicE22yTEFryBug6n6KjSdYCz7zlFT9dXj6vbdPNwc7dablLDCetSQUtMSm4AiKFFIbnICiYXojTMcJphXnIuaFYBF9IYwTJGdCY1YRLTMqeCTdFszA0f0MZCtd7utN8rp61a2-elcn6rYlSESrbIevxixFvv3iOETu1sGB7WDbgYlOwPSEoI70k-ksa7EDxUP9EEq6FpNbSohhYVkaqXX033Pjz6rGv_bZn9tvyJqras2CcHz40f</recordid><startdate>20091201</startdate><enddate>20091201</enddate><creator>Castleton, C W M</creator><creator>Höglund, A</creator><creator>Mirbt, S</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SR</scope><scope>7TB</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>DF2</scope></search><sort><creationdate>20091201</creationdate><title>Density functional theory calculations of defect energies using supercells</title><author>Castleton, C W M ; Höglund, A ; Mirbt, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c513t-62d01d5cee1c2bb7564b3796dc3c52405d55624fe567cc63431a47a13702d8263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Fysik</topic><topic>NATURAL SCIENCES</topic><topic>NATURVETENSKAP</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Castleton, C W M</creatorcontrib><creatorcontrib>Höglund, A</creatorcontrib><creatorcontrib>Mirbt, S</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Uppsala universitet</collection><jtitle>Modelling and simulation in materials science and engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Castleton, C W M</au><au>Höglund, A</au><au>Mirbt, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Density functional theory calculations of defect energies using supercells</atitle><jtitle>Modelling and simulation in materials science and engineering</jtitle><date>2009-12-01</date><risdate>2009</risdate><volume>17</volume><issue>8</issue><spage>084003</spage><epage>084003 (21)</epage><pages>084003-084003 (21)</pages><issn>0965-0393</issn><issn>1361-651X</issn><eissn>1361-651X</eissn><abstract>Reliable calculations of defect properties may be obtained with density functional theory (DFT) using the supercell approximation. We systematically review the known sources of error and suggest how to perform calculations of defect properties in order to minimize errors. We argue that any analytical error-correction scheme relying on electrostatic considerations alone is not appropriate to derive reliable defect formation energies, certainly not for relaxed geometries. Instead we propose finite size scaling of the calculated defect formation energies, and compare the application of this with both fully converged and 'Gamma' (Gamma) point only k-point integration. We provide a recipe for practical DFT calculations which will help to obtain reliable defect formation energies and demonstrate it using examples from III-V semiconductors.</abstract><pub>IOP Publishing</pub><doi>10.1088/0965-0393/17/8/084003</doi><oa>free_for_read</oa></addata></record> |
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subjects | Fysik NATURAL SCIENCES NATURVETENSKAP Physics |
title | Density functional theory calculations of defect energies using supercells |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T10%3A09%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_swepu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Density%20functional%20theory%20calculations%20of%20defect%20energies%20using%20supercells&rft.jtitle=Modelling%20and%20simulation%20in%20materials%20science%20and%20engineering&rft.au=Castleton,%20C%20W%20M&rft.date=2009-12-01&rft.volume=17&rft.issue=8&rft.spage=084003&rft.epage=084003%20(21)&rft.pages=084003-084003%20(21)&rft.issn=0965-0393&rft.eissn=1361-651X&rft_id=info:doi/10.1088/0965-0393/17/8/084003&rft_dat=%3Cproquest_swepu%3E743172115%3C/proquest_swepu%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c513t-62d01d5cee1c2bb7564b3796dc3c52405d55624fe567cc63431a47a13702d8263%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=743172115&rft_id=info:pmid/&rfr_iscdi=true |