Hole transport in single crystal synthetic diamond at low temperatures

Investigating the effects of local scattering mechanisms is of great importance to understand charge transport in semiconductors. This article reports measurements of the hole transport properties of boron-doped (100) single-crystalline chemical vapor deposited diamond. A Time-of-Flight measurement...

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Bibliographic Details
Published in:Applied physics letters 2013-04, Vol.102 (15), p.152113
Main Authors: Majdi, S., Kovi, K. K., Hammersberg, J., Isberg, J.
Format: Article
Language:English
Subjects:
Engineering Science with specialization in Science of Electricity
Teknisk fysik med inriktning mot elektricitetslära
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Summary:Investigating the effects of local scattering mechanisms is of great importance to understand charge transport in semiconductors. This article reports measurements of the hole transport properties of boron-doped (100) single-crystalline chemical vapor deposited diamond. A Time-of-Flight measurement using a 213 nm, pulsed UV laser for excitation, was performed on high-purity single-crystalline diamonds to measure the hole drift velocity in the low-injection regime. The measurements were carried out in the temperature range 10-80 K. The results obtained are directly applicable to low-temperature detector applications. By comparing our data to Monte-Carlo simulations, a detailed understanding of the dominating hole scattering mechanisms is obtained.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.4802449