Vapor transport deposition and epitaxy of orthorhombic SnS on glass and NaCl substrates

• Published in: Applied physics letters 2013-07, Vol.103 (5)
• Main Authors: Wangperawong, Artit, Herron, Steven M., Runser, Rory R., Hägglund, Carl, Tanskanen, Jukka T., Lee, Han-Bo-Ram, Clemens, Bruce M., Bent, Stacey F.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118; 1077-3118
• DOI: 10.1063/1.4816746

Polycrystalline SnS, Sn2S3, and SnS2 were deposited onto glass substrates by vapor transport deposition, with the stoichiometry controlled by deposition temperature. In addition, epitaxial growth of orthorhombic SnS(010) films on NaCl(100) with thicknesses up to 600 nm was demonstrated. The in-plane [100] directions of SnS and NaCl are oriented approximately 45° apart, and the translational relationship between SnS and NaCl was predicted by density functional theory. The epitaxial SnS is p-type with carrier concentration on the order of 1017 cm−3 and Hall hole mobility of 385 cm2 V−1 s−1 in-plane. It has indirect and direct bandgaps of 1.0 and 2.3 eV, respectively.