Reactive sputtering of titanium boride

• Published in: Thin solid films 1989-05, Vol.172 (1), p.133-140
• Main Authors: Larsson, T., Blom, H.-O., Berg, S., Östling, M.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0040-6090; 1879-2731; 1879-2731
• DOI: 10.1016/0040-6090(89)90124-7

The process of reactive sputtering of titanium boride in a diborane-argon mixture has been studied. The influence of r.f. power and mass flow of reactive gas has been investigated. The decomposition and consumption of the process gas has been studied by mass spectrometry. Optical emission spectrometry was used to study the sputtering rates of titanium and boron. Deposited film composition was investigated by Rutherford backscattering analysis. Film deposition rate was measured at various deposited compositions. The process is found to be similar to the reactive sputtering of silicides in a silane-argon mixture. The effect of a hysteresis region, common in reactive sputtering, is absent. Instead, measurements indicate that the target becomes completely covered with boron below a well-defined power level for a constant mass flow of diborane. This region corresponds to almost pure boron deposition. At higher power levels, a compound is formed with an increasing metal content at higher power levels.