Deep level transient spectroscopy analysis of fast ion tracks in silicon

Deep level transient spectroscopy measurements of electron traps in MeV proton- and alpha-irradiated n-type silicon have been performed. Six deep levels are found in proton-irradiated samples, while only three appear after alpha irradiation. The influence of the irradiation dose on the defect produc...

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Bibliographic Details
Published in:Journal of applied physics 1990-02, Vol.67 (3), p.1266-1271
Main Authors: HALLEN, A, SUNDQVIST, B. U. R, PASKA, Z, SVENSSON, B. G, ROSLING, M, TIREN, J
Format: Article
Language:English
Subjects:
360605 - Materials- Radiation Effects
BARYONS
CHARGED PARTICLES
COLLISIONS
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
Electron states
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
Exact sciences and technology
FERMIONS
HADRONS
HELIUM IONS
Impurity and defect levels
ION COLLISIONS
IONS
LEPTONS
LOW TEMPERATURE
MATERIALS
MATERIALS SCIENCE
MEDIUM TEMPERATURE
MEV RANGE
N-TYPE CONDUCTORS
NUCLEONS
PHYSICAL RADIATION EFFECTS
Physics
POINT DEFECTS
PROTONS
RADIATION EFFECTS
SCALING LAWS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPECTROSCOPY
TRAPS
VACANCIES
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Summary:Deep level transient spectroscopy measurements of electron traps in MeV proton- and alpha-irradiated n-type silicon have been performed. Six deep levels are found in proton-irradiated samples, while only three appear after alpha irradiation. The influence of the irradiation dose on the defect production is investigated together with the depth concentration profiles. The profiles scale with the nuclear energy deposition, but in the case of the doubly negative charged state of the divacancy at EC −0.24 eV, the peak concentration at the end of the track is less pronounced relative to the tail region towards the surface. It is proposed that the singly negative charged state at EC −0.42 is more probable in a highly distorted lattice and it is shown that the formation of the singly negative charged state of the divacancy dominates the defect production for higher doses.
ISSN:0021-8979
1089-7550
1089-7550
DOI:10.1063/1.345702