Patterning of silicon wafers using the plasma jet dry etching technique

• Published in: Vacuum 1990, Vol.41 (4), p.899-901
• Main Authors: Barklund, A.M, Blom, H.-O, Berg, S, Bardos, L
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Mechanical and acoustical properties; adhesion; Physics; Solid surfaces and solid-solid interfaces; Solid-fluid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0042-207X; 1879-2715; 1879-2715
• DOI: 10.1016/0042-207X(90)93816-2

A very high rate dry etching system based on the plasma jet principle has recently been presented. With this device it is possible to create high concentrations of reactive species. This is done by passing the active gases through a hollow cathode discharge inside a nozzle. A jet stream of radicals will be formed. Silicon substrates can be etched by placing them in the jet stream. With this new technique it is possible to obtain etch rates in silicon which are two orders of magnitude larger than obtained by standard dry etching techniques. Aluminum and SiO 2 have been investigated as mask materials in order to study the possibility of using the plasma jet for micro-patterning. The influence of different processing parameters on the etched structures has been studied.