Dynamic modeling of the process control of reactive sputtering

A theoretical model for the dynamic behaviour of the reactive sputtering process is presented. Simulations of kinetic behaviour in the hysteresis region have been performed for a number of different processing conditions. The transient behaviour of the avalanche from metal to compound mode sputterin...

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Bibliographic Details
Published in:Vacuum 1990, Vol.41 (7), p.1974-1976
Main Authors: Moradi, M., Nender, C., Blom, H.-O., Berg, S.
Format: Article
Language:English
Subjects:
Biological and medical sciences
Blood and lymphatic vessels
Cardiology. Vascular system
Medical sciences
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Summary:A theoretical model for the dynamic behaviour of the reactive sputtering process is presented. Simulations of kinetic behaviour in the hysteresis region have been performed for a number of different processing conditions. The transient behaviour of the avalanche from metal to compound mode sputtering was studied. Including a reactive gas feedback control system to the process enables reactive sputtering to take place inside the hysteresis region. However, the time response of the reactive sputtering processes may restrict the possibility to obtain stable control in this region. The theoretical model enables us to predict which physical parameters that are responsible for this restriction. A comparison to experimental results supports the validity of the dynamic model.
ISSN:0042-207X
1879-2715
1879-2715
DOI:10.1016/0042-207X(90)94149-K