(Invited) Surface Passivation of High-k Dielectric Materials on Diamond Thin Films

Single-crystalline CVD diamond films have excellent electrical and material properties with potential in high power, high voltage and high frequency applications that are out of reach for conventional semiconductor materials. For realization of efficient devices (e.g. MOSFET), finding a suitable die...

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Bibliographic Details
Published in:ECS transactions 2015, Vol.69 (5), p.61-65
Main Authors: Kovi, Kiran Kumar, Majdi, Saman, Gabrysch, Markus, Suntornwipat, Nattakarn, Isberg, Jan
Format: Article
Language:English
Subjects:
Diamond
Engineering Science with specialization in Science of Electricity
High Mobility Channel
Teknisk fysik med inriktning mot elektricitetslära
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Summary:Single-crystalline CVD diamond films have excellent electrical and material properties with potential in high power, high voltage and high frequency applications that are out of reach for conventional semiconductor materials. For realization of efficient devices (e.g. MOSFET), finding a suitable dielectric is essential to improve the reliability and electrical performance of devices. In the current study, we present results from surface passivation studies by high- k dielectric materials such as aluminum oxide and hafnium oxide deposited by ALD on intrinsic and boron doped diamond substrates. The hole transport properties in the intrinsic diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. The MOS capacitor structure, which forms the basic building block of the MOSFET, is discussed.
ISSN:1938-5862
1938-6737
1938-6737
DOI:10.1149/06905.0061ecst