LaAlO3/SrTiO3 oxide heterostructures studied by resonant inelastic x-ray scattering

We report the application of resonant inelastic X-ray scattering to explore the nature of the single conducting interface in the oxide heterostructure LaAlO/sub 3//SrTiO/sub 3/. From the Ti 3d crystal-field excitations measured at the Ti L/sub 3/ resonance we not only derive information on the local...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2010, Vol.82 (24), p.241405
Main Authors: Berner, G., Glawion, S., Walde, J., Pfaff, F., Hollmark, Håkan, Duda, Laurent, Paetel, S., Richter, C., Mannhart, J., Sing, M., Claessen, R.
Format: Article
Language:English
Subjects:
Fysik
NATURAL SCIENCES
NATURVETENSKAP
Physics
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Summary:We report the application of resonant inelastic X-ray scattering to explore the nature of the single conducting interface in the oxide heterostructure LaAlO/sub 3//SrTiO/sub 3/. From the Ti 3d crystal-field excitations measured at the Ti L/sub 3/ resonance we not only derive information on the local geometry at the interface but are also able to follow the evolution of the sheet carrier density with the thickness of the LaAlO/sub 3/ overlayer. These findings confirm after calibration to previous hard X-ray photoelectron spectroscopy measurements that the charge density from spectroscopy exceeds the one derived from Hall-effect measurements, indicating the coexistence of itinerant /i and/ localized Ti 3d electrons at the interface. On the other hand, we observe a saturation of the charge-carrier concentration above a LaAlO/sub 3/ thickness of 6 unit cells at ~1*10/sup 14/ cm/sup -2/, well below the canonical value for ideal electronic reconstruction.
ISSN:1550-235X
1098-0121
DOI:10.1103/PhysRevB.82.241405