Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si

The approach to quasi equilibrium sputtering of transition elements Co, Er, V and Ni during high-fluence implantation of Si(1 1 1) using a metal vapour vacuum arc (MEVVA) source has been studied by time of flight-energy elastic recoil detection analysis (ToF-E ERDA) and scanning electron microscopy...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2001, Vol.173 (4), p.427-435
Main Authors: Zhang, Yanwen, Zhang, Tonghe, Xiao, Zhisong, Whitlow, Harry J.
Format: Article
Language:English
Subjects:
MEVVA
Silicide
Sputtering transients
ToF-E ERDA
Transition elements
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Summary:The approach to quasi equilibrium sputtering of transition elements Co, Er, V and Ni during high-fluence implantation of Si(1 1 1) using a metal vapour vacuum arc (MEVVA) source has been studied by time of flight-energy elastic recoil detection analysis (ToF-E ERDA) and scanning electron microscopy (SEM). The partial sputter yield of the implanted species was determined from the change in the content of the implanted species with the implanted ion fluence. The partial sputter yield of Co exhibits a step-like rise to ∼0.4 that might be associated with a rapid segregation of Co to the surface followed by a slow exponential-like increase. Er on the other hand follows an exponential approach to the quasi-equilibrium partial sputtering yield which is indicative of no strong buildup of Er within the sputter escape depth. Additional data for Ni and V suggest also an exponential approach to quasi-equilibrium sputtering.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(00)00430-4