Barrier-free semimetallic PtSe2 contact formation in two-dimensional PtSe2/PtSe2 homostructure for high-performance field-effect transistors

[Display omitted] •We successfully improved the current on/off ratio of homostructured 2D/2D PtSe2/PtSe2 field-effect transistor.•We demonstrated a high-performance 2D large-area PtSe2 homostructured FET by utilizing PtSe2 films instead of metal electrodes.•Schottky-barrier-free contacts and low con...

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Bibliographic Details
Published in:Applied surface science 2023-11, Vol.638, p.158061, Article 158061
Main Authors: Kim, Yun-Ho, Kang, Min-Sung, Choi, Jae Won, Lee, Won-Yong, Kim, Min-Jeong, Park, No-Won, Yoon, Young-Gui, Kim, Gil-Sung, Lee, Sang-Kwon
Format: Article
Language:English
Subjects:
Homostructure
Platinum diselenide
Schottky -barrier -free contact
Transition metal dichalcogenide
van der Waals contacts
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Summary:[Display omitted] •We successfully improved the current on/off ratio of homostructured 2D/2D PtSe2/PtSe2 field-effect transistor.•We demonstrated a high-performance 2D large-area PtSe2 homostructured FET by utilizing PtSe2 films instead of metal electrodes.•Schottky-barrier-free contacts and low contact resistances at the interface are the key factors in improving properties. The search for low-resistance metal contacts on two-dimensional (2D) layered transition metal dichalcogenide (TMDC) materials for high-performance electronic devices remains challenging owing to the lack of interfacial bonding on the surface and a strong Fermi-level pinning effect. In this study, we demonstrate a high-performance 2D large-area homostructured PtSe2/PtSe2 field-effect transistor (FET) by introducing a Schottky-barrier-free and semimetallic PtSe2 film (top layer) as an ohmic contact to semiconducting 2D PtSe2 films (bottom layer) via the wet-transfer method. We successfully improved the current on/off ratio of homostructured 2D/2D PtSe2/PtSe2 FET by more than approximately twofold increase compared to the PtSe2 FET with Pt contacts owing to the barrier-free homojunction PtSe2 layer. Our finding represents a significant achievement in obtaining high-performance electronic devices with barrier-free contacts on homostructured PtSe2 FETs and paves the way toward a promising strategy for wafer-scale 2D TMDC electronic devices.
ISSN:0169-4332
1873-5584
1873-5584
DOI:10.1016/j.apsusc.2023.158061