Diamond deposition in a microwave electrode discharge at reduced pressures

Diamond deposition on heated Si-substrates was studied under microwave discharge generated by an electrode-antenna either in a “point-to-plane” arrangement or in a “parallel-plane” arrangement at gas pressures of 1–15 Torr in a mixture of hydrogen with methane and oxygen. Diamond growth of 1 μm h −1...

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Bibliographic Details
Published in:Diamond and related materials 1997, Vol.6 (2), p.224-229
Main Authors: Bárdoš, L., Baránková, H., Lebedev, Yu.A., Nyberg, T., Berg, S.
Format: Article
Language:English
Subjects:
Diamond deposition
Electrical engineering, electronics and photonics
Electronics
Elektronik
Elektroteknik, elektronik och fotonik
Microwave electrode discharge
Reduced pressure
TECHNOLOGY
TEKNIKVETENSKAP
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Summary:Diamond deposition on heated Si-substrates was studied under microwave discharge generated by an electrode-antenna either in a “point-to-plane” arrangement or in a “parallel-plane” arrangement at gas pressures of 1–15 Torr in a mixture of hydrogen with methane and oxygen. Diamond growth of 1 μm h −1 was obtained on surfaces up to 2 cm in diameter at microwave power of 150–200 W. No metal impurities from the electrode were detected in the diamond films. Typical gas mixture was 4% methane and 0.5% oxygen in hydrogen at a total pressure of 15 Torr. The role of additional r.f. potential during the film deposition was studied in the case of “point-to-plane” electrode arrangement. Correlation of the power absorbed in the plasma and the optical emission of H atoms have been observed.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(96)00694-2