Fabrication of high-density ordered nanoarrays in silicon dioxide by MeV ion track lithography

Self-assembled nanoporous alumina films were employed as masks for MeV ion track lithography. Films with thickness of 2 μm and pore diameters of 30 and 70 nm were attached to thermally grown Si O 2 covered with a thin gold layer. The samples were aligned with respect to the beam by detecting backsca...

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Bibliographic Details
Published in:Journal of applied physics 2005-02, Vol.97 (4), p.044310-044310-4
Main Authors: Razpet, Alenka, Johansson, Anders, Possnert, Göran, Skupiński, Marek, Hjort, Klas, Hallén, Anders
Format: Article
Language:English
Subjects:
alumina
ALUMINIUM OXIDES
arrays
BACKSCATTERING
CHLORINE IONS
ETCHING
FABRICATION
GOLD
HELIUM IONS
implantation
ION BEAMS
LAYERS
MATERIALS SCIENCE
MEV RANGE 01-10
NANOSTRUCTURES
PARTICLE TRACKS
PERIODICITY
POROUS MATERIALS
SILICON OXIDES
SOLUTIONS
THICKNESS
THIN FILMS
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Summary:Self-assembled nanoporous alumina films were employed as masks for MeV ion track lithography. Films with thickness of 2 μm and pore diameters of 30 and 70 nm were attached to thermally grown Si O 2 covered with a thin gold layer. The samples were aligned with respect to the beam by detecting backscattered He + ions with the initial energy of 2 MeV. The ordered pattern of the porous alumina films was successfully transferred into Si O 2 after irradiation with a 4 MeV Cl 2 + beam at fluence of 10 14 ions ∕ cm 2 , followed by chemical etching in a 5% H F solution.
ISSN:0021-8979
1089-7550
1089-7550
DOI:10.1063/1.1850617