Peculiarities of the electric and thermoelectric properties of GaTe

Measurements of electrical conductivity, Hall coefficient and thermoelectric power were carried out over the temperature range 136-563 K for GaTe compound grown in single crystal form by modified Bridgman technique. The crystals obtained had Positive-type conductivity with a hole concentration of $3...

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Bibliographic Details
Published in:Turkish journal of physics 2006, Vol.30 (2), p.95-102
Main Author: NASSARY, M. M
Format: Article
Language:English
Subjects:
electrical conductivity
Electricity, Magnetism and Optics
Electronic Structure, Electrical, Magnetic and Optical Properties
Elektrik, Manyetizma ve Optik
Elektriksel iletkenlik
Elektronik Yapı, Elektriksel, Manyetik ve Optik Özellikler
GaTe
Hall coefficient
Hall katsayısı
single crystal
Structure of Condensed Matter and Radiation Physics
Tek kristal
Termoelektrik etki
Termoelektromotor kuvvet
thermoelectric effect
thermoelectromotive force
Yoğunlaşmış Madde Yapısı ve Radyasyon Fiziği
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Summary:Measurements of electrical conductivity, Hall coefficient and thermoelectric power were carried out over the temperature range 136-563 K for GaTe compound grown in single crystal form by modified Bridgman technique. The crystals obtained had Positive-type conductivity with a hole concentration of $3.8x1O^{12}$ $cm^{-3}$ at room temperature. Conductivity and Hall mobility at room temperature were evaluated as 4.4 x $10^{-3}$ $ohm^{-1}$ $cm^{-1}$ and 7079 $cm^2$/V-s, respectively. The energy gap width of 1.5 eV was found. The effective mass of holes and electrons at room temperature were 4.16 $m_o$ and 0.1174 $m_o$ , respectively
ISSN:1300-0101