The application of halide perovskites in memristors

• Published in: Journal of semiconductors 2020-05, Vol.41 (5), p.51205-62
• Main Authors: Cao, Gang, Cheng, Chuantong, Zhang, Hengjie, Zhang, Huan, Chen, Run, Huang, Beiju, Yan, Xiaobing, Pei, Weihua, Chen, Hongda
• Format: Article
• Language: English
• Subjects: CMOS; fabrication methods; halide perovskites; memristors
• ISSN: 1674-4926; 2058-6140
• DOI: 10.1088/1674-4926/41/5/051205

New neuromorphic architectures and memory technologies with low power consumption, scalability and high-speed are in the spotlight due to the von Neumann bottleneck and limitations of Moore's law. The memristor, a two-terminal synaptic device, shows powerful capabilities in neuromorphic computing and information storage applications. Active materials with high defect migration speed and low defect migration barrier are highly promising for high-performance memristors. Halide perovskite (HP) materials with point defects (such as gaps, vacancies, and inversions) have strong application potential in memristors. In this article, we review recent advances on HP memristors with exceptional performances. First, the working mechanisms of memristors are described. Then, the structures and properties of HPs are explained. Both electrical and photonic HP-based memristors are overviewed and discussed. Different fabrication methods of HP memristor devices and arrays are described and compared. Finally, the challenges in integrating HP memristors with complementary metal oxide semiconductors (CMOS) are briefly discussed. This review can assist in developing HP memristors for the next-generation information technology.