Design and fabrication of Si/SiGe PMOSFETs

TN3; Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap la...

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Bibliographic Details
Published in:Journal of electronics (China) 2002-01, Vol.19 (1), p.108-112
Main Authors: Yang, Peifeng, Li, Jingchun, Yu, Qi, Wang, Xiangzhan, Yang, Mohua, He, Lin, Li, Kaicheng, Tan, Kaizhou, Liu, Daoguang, Zhang, Jing, Yi, Qiang, Fan, Zerui
Format: Article
Language:English
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Summary:TN3; Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage. In the light of these principles,a SiGe PMOSFET is designed and fabricated successfully. Measurement indicates that the SiGe PMOSFET's (L=2μm) transconductance is 45 mS/mm (300K) and 92mS/mm (77K), while that is 33 mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.
ISSN:0217-9822
1993-0615
DOI:10.1007/s11767-002-0020-4