The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD

O571.33%TN305%O472+.91%O434; Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si h...

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Published in:核技术(英文版) 2003-11, Vol.14 (4), p.238-241
Main Authors: CHEN Chang-chun, LIU Zhi-Hong, HUANG Wen-Tao, DOU Wei-Zhi, ZHANG Wei, TSIEN Pei-Hsin, ZHU De-Zhang
Format: Article
Language:English
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Summary:O571.33%TN305%O472+.91%O434; Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.
ISSN:1001-8042