XAFS applications in semiconductors

X-ray absorption fine structure （XAFS） has experienced a rapid development in the last three decades and has proven to be a powerful structural characterization technique nowadays. In this review, the XAFS basic principles including the theory, the data analysis, and the experiments have been introd...

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Bibliographic Details
Published in:Nuclear science and techniques 2006, Vol.17 (6), p.370-388
Main Authors: WEI, Shi-Qiang, SUN, Zhi-Hu, PAN, Zhi-Yun, ZHANG, Xin-Yi, YAN, Wen-Sheng, ZHONG, Wen-Jie
Format: Article
Language:English
Subjects:
Local structures
O472
O722 +.8
Semiconductor quantum system
Synchrotron radiation
X-ray absorption fine structure (XAFS)
XAFS应用
X射线吸收
半导体
基本原理
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Summary:X-ray absorption fine structure （XAFS） has experienced a rapid development in the last three decades and has proven to be a powerful structural characterization technique nowadays. In this review, the XAFS basic principles including the theory, the data analysis, and the experiments have been introduced in detail. To show its strength as a local structure probe, the XAFS applications in semiconductors are summarized comprehensively, that is, thin films, quantum wells and dots, dilute magnetic semiconductors, and so on. In addition, certain new XAFS-related techniques, such as in-situ XAFS, micro-XAFS, and time-resolved XAFS are also shown.
ISSN:1001-8042
2210-3147
DOI:10.1016/S1001-8042(07)60006-2