Demonstration of Pm-147 GaN betavoltaic cells

Two GaN p-（i）-n diodes were designed and fabricated, and their electrical performances with 63Ni and 147pm plate sources were compared. The results showed that the diodes with 147Pm had better electrical performances, with a short-circuit current （Isc） of 59 nA, an open-circuit voltage （Voc） of 1.4...

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Bibliographic Details
Published in:核技术（英文版） 2014-04, Vol.25 (2), p.67-70
Main Author: 王关全 李昊 雷轶松 赵文伯 杨玉青 罗顺忠
Format: Article
Language:English
Subjects:
GaN
二极管
开路电压
最大功率
电气性能
短路电流
示范
细胞
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Summary:Two GaN p-（i）-n diodes were designed and fabricated, and their electrical performances with 63Ni and 147pm plate sources were compared. The results showed that the diodes with 147Pm had better electrical performances, with a short-circuit current （Isc） of 59 nA, an open-circuit voltage （Voc） of 1.4 V, and a maximum power （Pmax） of 49.4nw. The ways to improve the electrical performances are discussed, including appropriate increase of the i-GaN thickness.
ISSN:1001-8042
2210-3147
DOI:10.13538/j.1001-8042/nst.25.020403