Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode

The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes (APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity...

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Bibliographic Details
Published in:Nuclear science and techniques 2018-10, Vol.29 (10), p.19-26, Article 139
Main Authors: Liu, Gui-Peng, Wang, Xin, Li, Meng-Nan, Pang, Zheng-Peng, Tian, Yong-Hui, Yang, Jian-Hong
Format: Article
Language:English
Subjects:
Energy
Hadrons
Heavy Ions
Nuclear Energy
Nuclear Physics
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Summary:The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes (APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.
ISSN:1001-8042
2210-3147
DOI:10.1007/s41365-018-0480-3