Atomistic simulation of free transverse vibration of graphene,hexagonal SiC, and BN nanosheets

Free transverse vibration of monolayer graphene,boron nitride (BN), and silicon carbide (SiC) sheets is investigated by using molecular dynamics finite element method.Eigenfrequencies and eigenmodes of these three sheets in rectangular shape are studied with different aspect ratioswith respect to va...

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Bibliographic Details
Published in:Acta mechanica Sinica 2017-02, Vol.33 (1), p.132-147
Main Authors: Nguyen, Danh-Truong, Le, Minh-Quy, Bui, Thanh-Lam, Bui, Hai-Le
Format: Article
Language:English
Subjects:
Aspect ratio
Atomistic
Boron nitride
Boundary conditions
Classical and Continuum Physics
Computational Intelligence
Computer simulation
dynamics
element
Engineering
Engineering Fluid Dynamics
finite
Finite element method
Graphene
method
Molecular dynamics
Nanosheets
Research Paper
Resonant frequencies
sheet
Transverse
Sheets
Silicon carbide
simulation
Hexagonal
Theoretical and Applied Mechanics
Transverse oscillation
vibration
Molecular
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Summary:Free transverse vibration of monolayer graphene,boron nitride (BN), and silicon carbide (SiC) sheets is investigated by using molecular dynamics finite element method.Eigenfrequencies and eigenmodes of these three sheets in rectangular shape are studied with different aspect ratioswith respect to various boundary conditions. It is found that aspect ratios and boundary conditions affect in a similar way on natural frequencies of graphene, BN, and SiC sheets. Natural frequencies in all modes decrease with an increase of the sheet’s size. Graphene exhibits the highest natural frequencies,and SiC sheet possesses the lowest ones. Missing atoms have minor effects on natural frequencies in this study.
ISSN:0567-7718
1614-3116
DOI:10.1007/s10409-016-0613-z