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A Highly Linear Low-Voltage Source-Degeneration Transconductor Based on Unity-Gain Buffer
A complementary metal oxide semiconductor (CMOS) transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage. Simulations show that the transconductor...
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Published in: | Tsinghua science and technology 2009-12, Vol.14 (6), p.698-702 |
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Main Author: | |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | A complementary metal oxide semiconductor (CMOS) transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage. Simulations show that the transconductor using an 0.18-μm standard CMOS process with a 1.2-V supply voltage has less than -80 dB total harmonic distortion (THD) for a 1-MHz 0.4-Vp-p differential input signal. The third-order intermodulation is less than -63 dB for 0.25 Vp-p differential inputs at 1 MHz. The DC power consumption in the transconductor core is 240 μW. This topology is a feasible solution for low voltage and low power applications. |
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ISSN: | 1007-0214 1878-7606 1007-0214 |
DOI: | 10.1016/S1007-0214(09)70137-3 |