Fabrication and Characterization of VO2 Thin Films by Direct Current Facing Targets Magnetron Sputtering and Low Temperature Oxidation

Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2...

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Bibliographic Details
Published in:Transactions of Tianjin University 2008-06, Vol.14 (3), p.173-177
Main Author: 梁继然 胡明 刘志刚 韩雷 陈涛
Format: Article
Language:English
Subjects:
Engineering
Humanities and Social Sciences
Mechanical Engineering
multidisciplinary
Science
二氧化钒薄膜
低温氧化
制备方法
直流电表面目标磁电管反应溅射法
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Summary:Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.
ISSN:1006-4982
1995-8196
DOI:10.1007/s12209-008-0031-9