Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier

A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complet...

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Bibliographic Details
Published in:Transactions of Tianjin University 2014, Vol.20 (4), p.299-309
Main Author: 张为 宋博 付军 王玉东 崔杰 李高庆 张伟 刘志弘
Format: Article
Language:English
Subjects:
dBm
Engineering
GHz
Humanities and Social Sciences
Mechanical Engineering
multidisciplinary
Science
SiGe异质结双极晶体管
功率增益
双反馈
宽带低噪声放大器
硅锗
设计
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Summary:A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance： a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.
ISSN:1006-4982
1995-8196
DOI:10.1007/s12209-014-2118-9