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Review on Metallization Approaches for High-Efficiency Silicon Heterojunction Solar Cells
Crystalline silicon (c-Si) heterojunction (HJT) solar cells are one of the promising technologies for next-generation industrial high-efficiency silicon solar cells, and many efforts in transferring this technology to high-volume manufacturing in the photovoltaic (PV) industry are currently ongoing....
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Published in: | Transactions of Tianjin University 2022-10, Vol.28 (5), p.358-373 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Crystalline silicon (c-Si) heterojunction (HJT) solar cells are one of the promising technologies for next-generation industrial high-efficiency silicon solar cells, and many efforts in transferring this technology to high-volume manufacturing in the photovoltaic (PV) industry are currently ongoing. Metallization is of vital importance to the PV performance and long-term reliability of HJT solar cells. In this review, we summarize the development status of metallization approaches for high-efficiency HJT solar cells. For conventional screen printing technology, to avoid the degradation of the passivation properties of the amorphous silicon layer, a low-temperature-cured ( |
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ISSN: | 1006-4982 1995-8196 |
DOI: | 10.1007/s12209-022-00336-9 |