Field Emission of SiCN Thin Films Bombarded by Ar^＋ Ions

• Published in: Wuhan University journal of natural sciences 2003, Vol.8 (3A), p.829-832
• Main Authors: You-peng, Ma, Jin-chai, Li, Guo, Huai-xi, Xian-feng, Lu, Ming-an, Chen, Ming-sheng, Ye
• Format: Article
• Language: English
• Subjects: Argon ions; Chemical synthesis; Chemical vapor deposition; Current density; Emissions; Field emission; Ion bombardment; Ions; Photoelectron spectroscopy; Photoelectrons; Raw materials; Silicon carbonitride; Thin films; X ray photoelectron spectroscopy; 化学气相沉积; 场致发射显示器; 电子场发射; 硅碳氮化物薄膜
• ISSN: 1007-1202; 1993-4998
• DOI: 10.1007/bf02900825

SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P-type Si (1 0 0) wafers using C2H4, SiH4 and N2 as raw materials.In order to get rid of the oxygen absorbed on the surface and improve the characteristics of electron field emission, Ax^+ ions of low energy were used to bombard the samples. The field emission characteristics of SiCN thin films before and after Ar^+ bombardment were studied in the super vacuum environment of 10^-6 Pa. It was showed that the turn-on field (defined as the point where the current-voltage curve shows a sharp increase in the current density) decreased from 38 V/μm before bombardment to 25 V/μm after bombardment. And the maximum emission current density increased from 159. 2 to 267. 4 μA/cm^2. The composition before and after Ar^+ bombardment was compared using X-ray photoelec-tron spectroscopy (XPS). Our results illustrated that the field emission characteristics were improved after the bombardment of Ar^+.