Development on transparent conductive ZnO thin films doped with various impurity elements

A general review of recent research progress in fabricating transparent conductive ZnO thin films by means of intentional doping and codoping with In, Ga, A1, Mg, Li, F, H, N, and P, divided into metals and nonmetals, is presented in this article. The main emphasis is placed on introducing and discu...

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Bibliographic Details
Published in:Rare metals 2011-04, Vol.30 (2), p.175-182
Main Authors: Zhao, Lin, Shao, Guangjie, Song, Shitao, Qin, Xiujuan, Han, Sihuizhi
Format: Article
Language:English
Subjects:
Aluminum
Biomaterials
Chemistry and Materials Science
Doping
Energy
Gallium
Impurities
Materials Engineering
Materials Science
Metallic Materials
Nanoscale Science and Technology
Optical properties
Photoelectricity
Physical Chemistry
Thin films
Zinc oxide
ZnO薄膜
元素掺杂
光学性质
功能薄膜
导电氧化锌
研究成果
透明导电
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Summary:A general review of recent research progress in fabricating transparent conductive ZnO thin films by means of intentional doping and codoping with In, Ga, A1, Mg, Li, F, H, N, and P, divided into metals and nonmetals, is presented in this article. The main emphasis is placed on introducing and discussing the recent research achievements on the mechanisms of the incorporation of these impurities, and their effects on the electrical and optical properties. Lastly, this article concludes with a summary of the present state of investigations on doping elements in fabricating functional ZnO thin films for photoelectric applications, and with our personal view of the perspective of future studies on doped ZnO thin films.
ISSN:1001-0521
1867-7185
DOI:10.1007/s12598-011-0220-x