Total dose radiation effects on SOI NMOS transistors with different layouts

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor （SOI NMOS） transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen （SIMOX） substrate and tested using 10 keV X-ray radiation sources. The radiation performance is characteriz...

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Bibliographic Details
Published in:Chinese physics C 2008-08, Vol.32 (8), p.645-648
Main Author: 田浩 张正选 贺威 俞文杰 王茹 陈明
Format: Article
Language:English
Subjects:
晶体管
热灵敏度
物理学
辐射作用
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Summary:Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor （SOI NMOS） transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen （SIMOX） substrate and tested using 10 keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10^6 rad（Si）. The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.
ISSN:1674-1137
0254-3052
2058-6132
DOI:10.1088/1674-1137/32/8/011