Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-bas...

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Bibliographic Details
Published in:Chinese physics B 2022-03, Vol.31 (4), p.47103-672
Main Authors: Qiu, Qiu-Ling, Yang, Shi-Xu, Wu, Qian-Shu, Li, Cheng-Lang, Zhang, Qi, Zhang, Jin-Wei, Liu, Zhen-Xing, Zhang, Yuan-Tao, Liu, Yang
Format: Article
Language:English
Subjects:
donor doping
gallium nitride
intrinsic thermal excitation
polarized electric field
self-screening effect
surface states
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Summary:The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.
ISSN:1674-1056
DOI:10.1088/1674-1056/ac4746