Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

We investigate the effect of ozone (O 3 ) oxidation of silicon carbide (SiC) on the flat-band voltage ( V fb ) stability of SiC metal–oxide–semiconductor (MOS) capacitors. The SiC MOS capacitors are produced by O 3 oxidation, and their V fb stability under frequency variation, temperature variation,...

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Bibliographic Details
Published in:Chinese physics B 2022-11, Vol.31 (11), p.117302-575
Main Authors: Yin, Zhi-Peng, Wei, Sheng-Sheng, Bai, Jiao, Xie, Wei-Wei, Liu, Zhao-Hui, Qin, Fu-Wen, Wang, De-Jun
Format: Article
Language:English
Subjects:
bias temperature instability
Deal-Grove model
ozone oxidation
SiC MOS capacitors
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Summary:We investigate the effect of ozone (O 3 ) oxidation of silicon carbide (SiC) on the flat-band voltage ( V fb ) stability of SiC metal–oxide–semiconductor (MOS) capacitors. The SiC MOS capacitors are produced by O 3 oxidation, and their V fb stability under frequency variation, temperature variation, and bias temperature stress are evaluated. Secondary ion mass spectroscopy (SIMS), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) indicate that O 3 oxidation can adjust the element distribution near SiC/SiO 2 interface, improve SiC/SiO 2 interface morphology, and inhibit the formation of near-interface defects, respectively. In addition, we elaborate the underlying mechanism through which O 3 oxidation improves the V fb stability of SiC MOS capacitors by using the measurement results and O 3 oxidation kinetics.
ISSN:1674-1056
DOI:10.1088/1674-1056/ac7ccf