Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots

• Published in: Chinese physics B 2023-12, Vol.33 (1), p.10304-307
• Main Authors: Hu, Rui-Zi, Zhu, Sheng-Kai, Zhang, Xin, Zhou, Yuan, Ni, Ming, Ma, Rong-Long, Luo, Gang, Kong, Zhen-Zhen, Wang, Gui-Lei, Cao, Gang, Li, Hai-Ou, Guo, Guo-Ping
• Format: Article
• Language: English
• Subjects: quantum computation; quantum dot; quantum state readout
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/ace3a9

The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process are sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. We then analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage, we ensure the accuracy of the extrapolated probability. We then prove that the efficiency and robustness of this method are 60 times larger than those of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout of up to 0.7 K/1.5 T in the future.